研究内容・成果

2016 RCIQE International Seminar

March 8, 2016
Centenary Hall, Hokkaido University
Sponsored by
Research Center for Integrated Quantum Electronics (RCIQE),
Hokkaido University

日時: 平成28年 3月8日(火)10:00 ~ 16:25
場所: 北海道大学百年記念会館
主催: 北海道大学量子集積エレクトロニクス研究センター

→ Map of Hokkaido University and RCIQE


Program

(download PDF version)

10:00 - 10:05

"Opening Address"

10:05 - 10:40

"Stress Engineered Nano-Channel InAlN/GaN Fin-HEMTs on Si substrate"
Subramaniam Arulkumaran, Nanyang Technological University, Singapore

10:40-11:15

"GaN Devices for Automotive Applications"
Tetsu Kachi, Toyota Central R&D Labs., Inc., Japan

11:15-11:50

"Characterization of Surfaces and Interfaces of InAlN"
Masamichi Akazawa, Research Center for Integrated Quantum Electronics, Hokkaido University, Japan

11:50-13:30

Lunch

13:30- 14:05

"Considerations on Neuromorphic Hardware"
Ferdinand Peper, National Institute of Information and Communications Technology (NICT), Japan

14:05-14:40

"Semiconductor Nanowires and Photonics"
Kenji Hiruma, Central Research Laboratory, Hitachi Ltd., Japan

14:40-15:15

"Coherent Control of Nuclear Spins in Semiconductor using Electrical Spin Injection"
Tetsuya Uemura, Graduate School of Information Science and Technology, Hokkaido University, Japan

15:15-15:35

Break

15:35-16:20

"III-V Semiconductor Nanowires and Their Device Applications"
Takashi Fukui, Graduate School of Information Science and Technology, Hokkaido University , Japan

16:20-16:25

"Closing Remarks"

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