Fig.1 UHV-based MBE-MOVPE growth/fabrication/characterization
system installed in a super clean room.

Fig.2 Metal-organic vapor phase epitaxy (MOVPE) system for self-organized growth of compound semi-conductor quantum structures.

Fig.3 Electron beam lithography system for fabrication of nm-sized quantum structures and devices. 

Fig.4 Scanning electron microscope with a resolution of 0.6nm.

Fig.5 Dilution refrigerator allowing characterization at ultra-low temperatures in mK range.

Fig.6 By using a narrow UHV gap (100nm-300nm), contactless C-V characterization can be carried out on semiconductor free/processed surfaces and ultrathin insulator/semiconductor interfaces.